TRR 142 - Molecular beam epitaxy of tailored GaAs-based heterostructures (Z01)

Overview

This scientific service project provides the following GaAs-based samples for other projects within TRR: Heterostructures with embedded (In,Ga)As quantum dots with tailored emission and biexciton binding energies. Schottky diodes containing quantum dot molecules. Planar GaAs/AlAs-based resonator structures with integrated quantum wells. Heterostructures with positioned quantum dots prepared by growth on pre-patterned substrates. All heterostructures are fabricated by molecular beam epitaxy.

Key Facts

Grant Number:
231447078
Research profile area:
Optoelectronics and Photonics
Project type:
Research
Project duration:
04/2014 - 12/2017
Funded by:
DFG
Website:
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Principal Investigators

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Prof. Dr. Dirk Reuter

Optoelectronic materials and devices

About the person

Publications

Photonic crystal cavities with metallic Schottky contacts
W. Quiring, M. Al-Hmoud, A. Rai, D. Reuter, A.D. Wieck, A. Zrenner, Applied Physics Letters 107 (2015).
DOI
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